Semiconductor component having gate-turn-off thyristor and reduced thermal impairment

ABSTRACT

To provide thermal relief, particularly of the edge of disk-shaped gate-turn-off GTO thyristors (GTO) as are used in converters in power electronics, at least one cooling segment which is isolated from a GTO cathode metallization of the GTO thyristor segment (GTO) by a gate electrode metallization of a gate electrode is arranged on the edge and laterally adjacent to the GTO thyristor segment (GTO). An insulation layer is provided between a cooling segment metallization and the gate electrode metallization. Cooling segments in an lo outer annular zone can be alternately arranged with GTO thyristor segments (GTO) or offset towards the outside in the radial direction or perpendicular direction thereto. Instead of cooling segments, a p +  -type GTO emitter layer of the GTO thyristor segments (GTO) can be shortened at the edge in the outer annular zone. The edge side of these GTO thyristor segments (GTO) can exhibit a shorter charge carrier life than the remaining semiconductor body due to irradiation with electrons, protons or α-particles, which results in a lower operating current in this area. An ohmic impedance can be connected in series with a diode between a gate electrode and a cathode of the GTO thyristor (GTO) for stabilizing the trigger threshold and reducing its temperature dependence.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention is based on a gate-turn-off semiconductor component.

2. Discussion of Background

In U.S. Pat. No. 5,248,622, a gate-turn-off alloyed semiconductorcomponent in the technology of the free pressure contact is specified,the semiconductor body of which exhibits at the edge a silicone resinwhich acts as a thermal relief when the semiconductor body is built intoa housing. Such thermal edge relief is insufficient for non-alloyedpower semiconductors.

From EP-A2-0 387 721, a gate-turn-off thyristor is known in which aturn-off electrode at the edge for extracting the minority chargecarriers accumulated in a base layer also effects a thermal edge relief.This thyristor requiring two gates is unsuitable for power modules.

From DE-C2-3 509 745, a gate-turn-off thyristor is known in which, forcompensating for the unequal feed resistances of a point gate contact ina sector in the area closely around the gate supply point, a longercarrier life is set than in a sector in its far area. This neitherattempts nor achieves thermal edge relief.

German Offenlegungsschrift 2 041 727 discloses a semiconductor wafer onwhich, in an annular zone, several radially aligned GTO thyristorsegments are arranged which exhibit no cathode metallization at the edgein order to achieve a uniform current distribution over the entirecathode area by means of an increase in resistance at the edge duringturn-off.

In DE-C2-3 722 425, a GTO thyristor having several GTO segments arrangedin concentric rings is described in which, for achieving equal turn-offtimes and to avoid thermal breakdowns, particularly in the thyristorunits farther removed from the gate connection, the width of the annularemitter areas at the anode side in a ring farther removed from the gateconnection is smaller than the corresponding ring width in a ringlocated closer to the gate connection.

The disadvantageous factor in this arrangement is that the adaptation ofthe anode-emitter widths favors not only the turn-off process but alsoimpedes the turn-on process and thus puts the turn-on homogeneity of theelement at risk.

From EP-A2-0 283 588, a GTO thyristor is known in which, for uniformactivation of the parallel-connected individual elements, GTO thyristorsegments arranged in an outer ring exhibit a smaller electricalresistance between cathode contact and gate contact than in an innerring. In the outer ring, a gate distance from the n-type emitter of 50μm can be set whilst it is 150 μm in the inner ring. The electricallyeffective distance can be set by an insulation layer which engages belowthe respective adjoining metallization of cathode and control electrode.Different resistances can also be achieved by layers with differentthicknesses of the p-type base layer at the locations at which itemerges on the surface. At these locations, the p-type base layer canalso exhibit a different doping profile; a more highly doped additionallayer can also be applied there.

A disadvantage of these methods consists in that the impairment of theunfavorably placed segments depends not only on their position but alsoon the type of activation. Depending on whether this activationaccentuates or suppresses the difference between the segments, thecountermeasure initiated according to the arrangement is inadequate orovercompensating.

Gate-turn-off thyristors, so-called GTO thyristors, are used as powersemiconductor components, particularly in high-power converters. Inthese arrangements, the method of pulse-width modulation is frequentlyused for regulation, in which the GTO thyristors are turned on and offwith an approximately constant switching frequency which is independentof input and output frequencies. The electrical power dissipationproduced in the elements during this process is an importantdimensioning criterion since it actively heats up the component and musttherefore be removed by cooling, taking into consideration the maximumpermissible transition temperature and the thermal resistances betweensemiconductor body and heat sink.

The entire electrical power dissipation produced in the semiconductorbody can be subdivided into static losses, on the one hand, which dependon the mean pulse cycle and into dynamic losses, on the other hand,which are proportional to frequency and are composed of turn-on andturn-off losses. All these loss components are temperature-dependent.This is why, naturally, the heating-up rate itself also becomes afunction of the transition temperature.

Whilst the temperature dependence of most of the loss components (staticones, turn-on) is smaller rather than larger, the turn-off losses perpulse rise distinctly at higher temperatures. Since, at the same time,the storage time also increases which unfavorably influences the currentdistribution during the turn-off phase, a thermal instability can arisein which some of the element surface is heated up more and more andfinally exceeds the permissible maximum temperature without the elementas a whole reaching the thermal limit data.

With respect to the relevant prior art, reference is also made toEP-B1-0 200 863 from which a semiconductor component with GTO thyristorand diode structure is also known. The diode structure is mounted on theouter edge of the disk-shaped semiconductor at a distance of ≦1 mmcircularly around GTO thyristor segments annularly arranged and isconnected in antiparallel with the GTO thyristor. The charge carrierlife in the diode is set to be shorter than in the thyristor byinstalling heavy metal atoms such as gold or platinum into the siliconbase material of the semiconductor component or by electron or gammairradiation. Between the diode and the GTO gate electrode segments, aresistor or, respectively, a circular protective zone with anelectrically insulating passivation layer is provided which decouplesthe thyristor and diode areas from one another so that only few chargecarriers can cross over into the other areas in each case.

SUMMARY OF THE INVENTION

Accordingly, one object of the invention is to further develop agate-turn-off semiconductor component of the type initially mentioned insuch a manner that the thermal impairment of certain areas of itssemiconductor body, especially of its edge, is reduced.

An advantage of the invention consists in that unavoidable smallelectrical inequalities can only have a negative effect at very highcurrents. This is achieved mainly by increasing the mean cooling poweravailable per segment in the edge area by suitable measures, as far aspossible without the support area of the GTO elements in the edge areadecreasing further as a result and thus further increasing thesensitivity to an inhomogeneous pressure distribution.

The invention is based on the idea that, after all, thermal overheatingoccurs and endangers the GTO element function when a local heatingalready produced can no longer be compensated for by increased coolingpower. This increased cooling power has to do with the increasedtemperature gradients in the vicinity of the overheated location anddepends on the size of this location. If a normal disk cell is analyzedwith respect to this additional cooling power, it becomes clear that theGTO element edge represents a thermal weak point because a lateralthermal equalization can virtually only take place inwardly and not inall directions at this location.

In the case of disk cells, a pressure inhomogeneity forms after repeatedimperfect plane clamping, in most cases due to slight deformation ofcasing and metalization, to the extent that parts of the edge have aless specific contact pressure and thus are subject to less cooling. Dueto greater thermal resistances at the dry transitions, the GTO elementedge has a distinctly greater tendency to premature thermal overheatingeven if element inhomogeneities are otherwise uniformly distributed. Onthe basis of practical experience, this thermal impairment of the edgemust be given much greater weight in large GTOs than the inhomogeneitiesdue to the arrangement of the connection of the gate electrode whichhave already been discussed several times.

A further advantage according to an advantageous embodiment of theinvention consists in that the triggering currents have fewerdifferences within a temperature range of -40° C. to 125° C., and thusmore accurate triggering becomes possible.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings, wherein:

FIG. 1 shows a cross section through part of a gate-turn-offsemiconductor component having a GTO thyristor segment and a coolingsegment,

FIGS. 2a-2c show sector-like sections of a semiconductor component in atop view with GTO thyristor segments and cooling segments which aredifferently arranged at the edge,

FIG. 3 shows a sector-like section of a semiconductor component in a topview with GTO thyristor segments with a special anode-emitter structurein the edge area,

FIG. 4 shows a circuit diagram of the gate-turn-off semiconductorcomponent with a trigger stabilization diode, and

FIG. 5 shows a cross section through part of a gate-turn-offsemiconductor component according to FIG. 1 having an additional segmentfor the trigger stabilization diode according to FIG. 4.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to the drawings, wherein like reference numerals designateidentical or corresponding parts throughout the several views, FIG. 1shows a section of a cross section through a disk-shaped semiconductorcomponent with laterally adjacent areas of a GTO thyristor segment (GTO)and of a cooling segment (15) which is arranged at the edge with respectto the GTO thyristor segment (GTO). On the underside of thissemiconductor component, an anode metallization (1), for example ofaluminum, is provided which, as anode (A), compare FIG. 4, represents a1st main electrode of the gate-turn-off semiconductor component. On thetop of this semiconductor component, a GTO cathode metallization (9) isprovided which is connected electrically via a molybdenum pressureplate, not shown, and possible other intermediate layers to a coolingsegment metallization (13) and, as cathode (K), represents a 2nd mainelectrode of the gate-turn-off semiconductor component. In operation,the contact plate at the cathode side is thermally conductivelyconnected to a heat sink, not shown, for removing the dissipation heatof the semiconductor body. (5) designates a gate electrode metallizationwhich surrounds the GTO cathode metallization (9) and the coolingsegment metallization (13) with a predeterminable resistance distanceand is lower than the latter so that the electrical connection isconducted away laterally below the pressure plate, not shown, to acentral or annular opening, not shown, and from there laterally to theoutside in an insulated manner via a separate contact member, not shown.

The semiconductor component mainly consists of a relatively thickn-conducting n⁻ -type base layer (3) with low doping, on which ap-conducting p-type base layer (4) is applied on the cathode side. Onthis p-type base layer (4), a highly doped n-conducting n⁺ -type GTOemitter layer (10) is applied in the cathode area of the GTO thyristorsegment (GTO), which emitter layer is laterally slightly larger than theGTO cathode metallization (9). With about the same lateral extent as then⁺ -type GTO emitter layer (10), a highly doped p-conducting p⁺ -typeanode-emitter layer (11) is applied on the anode side of the n⁻ -typebase layer (3) and below the n⁺ -type GTO emitter layer (10). At aslight lateral distance from this p⁺ -type anode-emitter layer (11), ahighly doped n-conducting n⁺ -type short-circuit layer (2) and (2'),which short-circuits the p⁺ -type anode-emitter layer (11), is appliedon the anode side in the remaining lateral area on the n⁻ -type baselayer (3). This short-circuit layer can have different patterns, forexample as shown in FIG. 1, with a narrow strip of the n⁺ -typeshort-circuit layer (2') in the center of the p⁺ -type anode-emitterlayer (11) or without such a strip (2'). This n⁺ -type short-circuitlayer (2') has a width (d), which is preferably smaller than a width (a)of the p⁺ -type anode-emitter layer (11). The triggering time of the GTOthyristor segment (GTO) can be influenced by varying this width (a).

An electrical insulation layer (6) covers the lateral edge of the n⁺-type GTO emitter layer (10) and the intermediate space between the GTOcathode metallization (9) and the gate electrode metallization (5), thetwo metallizations (9, 5) covering the edge area of the insulation layer(6). An electrical insulation layer (14) covers the upper surface andthe lateral edge of a cooling segment boundary layer (12) and theintermediate space between the cooling segment metallization (13) andthe gate electrode metallization (5) which covers the edge area of theelectrical insulation layer (14). The cooling segment boundary layer(12) can be an n⁺ -type GTO emitter layer (10) or a p-type base layer(4).

FIGS. 2a-2c show a top view of a section of different sector-shapedarrangements of GTO thyristor segments (GTO) and, respectively, GTOcathode metallizations (9) and cooling segment metallizations (13). InFIG. 2a, the alignments of the elongated cooling segment metallizations(13) at the edge are essentially oriented perpendicularly to thealignments of the elongated GTO cathode metallizations (9). In FIG. 2b,cooling segment metallizations (13) alternating with GTO cathodemetallizations (9) are essentially radially aligned like the GTO cathodemetallizations (9) in the outer annular zone. In FIG. 2c, the coolingsegment metallizations (13) are displaced towards the outer edge, indistinction from those in FIG. 2b, or arranged staggered offset withrespect to the GTO cathode metallizations (9). The cooling segmentmetallizations (13) at the edge provide additional cooling in operationin these arrangements.

FIG. 3 shows in a further embodiment of the invention a section of asector of a semiconductor body in a top view, in which no coolingsegments (15) are provided. In distinction from GTO thyristor segments(GTO) in an inner annular zone (Zi), GTO thyristor segments (GTO) in anouter annular zone (Za) exhibit p⁺ -type GTO emitter layers (11a) whichare preferably shortened by 50% at the edge so that, although normaltriggering of the edge segments is guaranteed at any time, less currentis handled by these edge segments in the turned-on state and less poweris to be turned off than in the case of the GTO thyristor segments (GTO)in the inner annular zone (Zi). Turn-off delay time and storage time arecomparable. This makes it possible to reduce the power dissipation persegment distinctly without having to accept significant disadvantages,the dynamic turn-on and -off characteristics being approximately thesame.

According to a further embodiment of the invention, an additionalreduction in the charge carrier life (τ₂) compared with a charge carrierlife (τ₁) in the inner annular zone (Zi) or at the inner end of thefingers can be achieved, for example, by masked electron irradiation ofthe outermost ring (Za) of the GTO thyristor segments (GTO), preferablyon the outermost finger, in addition to or instead of a p⁺ -type GTOemitter layer (11a) which is shortened at the edge. This, too, makes itpossible to reduce the power dissipation produced in the outer annularzone (Za) since, on the one hand, a lower current density occurs in theon state and, on the other hand, a shorter turn-off loss time is alsoproduced by this means during turn-off because of the lower carrierdensity and, finally, a shorter reverse recovery time corresponding tothe reduced charge carrier life (τ₂) is to be expected.

This type of embodiment is very flexible since it can be easily dosed oroptimized via the additional irradiation dose without changing masks andis very effective. To ensure masking of the irradiation with electronswhich is easy to handle and is accurate, it is advantageous to userelatively low-energy electrons with an energy in the range of 1 MeV-2.5MeV, at least for the additional irradiation to be carried out, sincethese electrons can be easily masked by means of, for example,2-mm-thick molybdenum masks whilst a sufficiently homogeneous effect forachieving the intended edge relief is still generated with a siliconthickness of 1 mm.

As an alternative, a selective irradiation even with protons orα-particles can be carried out which, as is known, provide for much morelocalized lowering of the charge-carrier life (τ₂). These types ofirradiation can be masked even more easily and accurately. It ispossible to trim the outer half of the GTO thyristor segments (GTO) ofthe outermost annular zone (Za) by introducing a life sink close to theanode in such a manner that, in the main, a dosed shorter reverserecovery time of the turn-off process is produced and thus the reductionin power dissipation density in this critical area is achieved veryselectively.

FIG. 4 shows a circuit diagram of a GTO thyristor (GTO) with anode (A),cathode (K) and gate electrode (G) which is connected to the cathode (K)via a series circuit of a resistor (R) and a trigger stabilization diodeor diode (D). The resistor (R) has a resistance value in the range of 10Ω-500 Ω, preferably in the range of 50 Ω-200 Ω.

FIG. 5 shows, in addition to the exemplary embodiment of the inventionshown in FIG. 1, a section of a cross section through a disk-shapedsemiconductor component having an area for the diode (D) which islaterally adjacent to the GTO thyristor segment (GTO) and a resistor (R)arranged annularly around the diode (D). A 3-layer n⁺ n⁻ p-type area ofthe gate electrode metallization (5) of the GTO thyristor segment (GTO)is here laterally isolated from its 4-layer p⁺ n⁻ pn⁺ -type area by theareas of the resistor (R) and the diode (D).

The gate electrode (G) is connected directly to the p-type base layer(4) via gate electrode metallizations (5, 5') or, respectively, via amain gate electrode (5) and an auxiliary gate electrode (5'). In thearea of the diode (D), the diode-cathode metallization (8), which issmall in terms of area depending on the requirement, is connected to thep-type base layer (4) via an n⁺ -type diode-emitter layer (7).

In principle, the diode (D) can be constructed like a conventional GTOthyristor segment (GTO). In this case, a continuous n⁺ -typediode-emitter layer (7), which also extends over a laterally adjoiningresistance region (7'), indicated by dashed lines, is produced in themesa structure of the silicon. The current flow to the main gateelectrode (5) and to the auxiliary gate electrode (5') of the contact ofthe gate electrode (G) is symmetric. This structure results in a verylow series resistance (R) which could lead to too high a trigger currentrequirement for practical applications.

For the selective dimensioning of this resistor (R), the lateral extentof the n⁺ -type diode-emitter layer (7) can therefore be limited. Theremaining, symmetrically arranged resistance region (7') only containsthe p-doping and acts as part of the resistor (R). Since this resistor(R) is in most cases relatively small, this ensures good stabilization,particularly at high temperatures.

Instead of the p-doped resistance region (7'), a further increase in theresistance (R) can be achieved by reducing the thickness of the layer ofthe lateral area of the p-type base layer (4), for example by etchingdown to a certain depth. This resistance region is designated by (17).The low conductivity of the remaining p-type layer in the area of theresistance region (17) leads to a large resistance (R).

In all practical cases, it is attempted to have essentially the samegeometric dimensioning of the resistor (R) along the entire edge of thediode (D).

The diode path on the cathode-side surface of the semiconductorcomponent does not contribute anything to the actual current conductionof the GTO thyristor segment (GTO). Seen electrically, the triggerthreshold of the total system can be raised considerably as a result.This effect is virtually independent of the local arrangement anddistance of the individual areas; it acts as long as the strayinductance is small, even with a hybrid arrangement.

Since the effect of the diode (D) increases proportionally to its area,its geometric size is of importance.

The effectiveness is increased by a higher charge carrier life in thediode area (D) in comparison with the GTO thyristor segment area (GTO).If recombination centers are selected which exhibit a temperaturedependence only above a critical temperature in the range between -40°C. and 125° C., a high leakage current can be additionally reduced atlow temperatures.

Since the diode section (D) carries only a relatively low current, adiode metallization (8) with a small area is in most cases sufficient.For this reason, unused parts of the area of the cathode side of thesemiconductor component can possibly be used for the area of the n⁺-type diode-emitter layer (7).

When there are differences in the charge carrier life in the p-type baselayer (4), there will be a great redistribution of the local currents.The GTO thyristor segment (GTO) having the shortest charge carrier lifehandles approximately the entire hole current shortly before the triggerthreshold is reached. It follows from this that slight technologicaldifferences can lead to a severe change in the total trigger current.

Naturally, conventional metals or metal alloys can be used for theelectrode metallizations (1, 5, 5', 8, 9, 13). Aluminum is preferablyused. The semiconductor component can have a circular or other shape. Itis important that, in particular, the GTO thyristor segments (GTO) atthe edge are thermally relieved.

It is advantageous for the stabilization of the trigger threshold andthe reduction of its temperature dependence to connect the gateelectrode (G) of the GTO thyristor segment (GTO) electrically via adiode (D) to its cathode (K), the cathodes of these two components beingshort-circuited.

In principle, the diode (D) can also act stabilizing in hybrid form. Itcan be constructed as n⁺ p-type diode or as Schottky diode. The currentthrough the diode (D) flows laterally from the gate electrodemetallizations (5, 5') to the diode metallization (8). A parasiticcurrent from the anode (A) is prevented by the n⁺ -type emitter layer(2).

In addition, the semiconductor component can have at least one diode,not shown in the figures, in antiparallel with the at least one GTOthyristor segment (GTO), as is usual for reverse-conducting thyristors.

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

    ______________________________________                                        LIST OF DESIGNATIONS                                                          ______________________________________                                        1        Anode metalization, 1st main electrode                               2        n.sup.+ -type short-circuit layer                                    2'       n.sup.+ -type short-circuit layer in the center of 11                3        n.sup.- -type base layer                                             4        p-type base layer                                                    5        Gate electrode metallization, main gate                                       electrode                                                            5'       Gate electrode metallization, auxiliary gate                                  electrode                                                            6, 14    Electrical insulation layers                                         7        n.sup.+ -type diode-emitter layer                                    7', 17   Resistance regions, resistance zones,                                         resistance paths                                                     8        Diode metallization                                                  9        GTO cathode metallization, 2nd main electrode                        10       n.sup.+ -type GTO emitter layer                                      11       p.sup.+ -type GTO emitter layer                                      11a      p.sup.+ -type GTO emitter layer 11 shortened at the                           edge                                                                 12       Cooling segment boundary layer                                       13       Cooling segment metallization                                        15       Cooling segment                                                      a        Width of 11                                                          A        Anode                                                                d        Width of 2'                                                          D        Diode, trigger stabilization diode                                   G        Gate electrode                                                       GTO      GTO thyristor, GTO thyristor segment                                 K        Cathode                                                              R        Resistor                                                             Za       Outer ring, outer annular zone                                       Zi       Inner ring, inner annular zone                                       τ.sub.1, τ.sub.2                                                               Charge carrier lives                                                 ______________________________________                                    

What is claimed as new and desired to be secured by Letters Patent ofthe United States is:
 1. A gate-turn-off semiconductor component with adisk-like semiconductor body comprising:at least one GTO thyristorstructure, said at least one GTO thyristor structure furtherincluding:a) at least one p-conducting p⁺ anode emitter layer adjacentto a metal anode of electrical conductivity; b) an n-conducting n⁻ baselayer adjoining the p⁺ anode emitter layer; c) a p-conducting p-typebase layer adjoining the n⁻ base layer; d) an n-conducting n⁺ cathodeemitter layer adjoining the p-type base layer, and adjoining a metalcathode of electrical conductivity on a cathode side of thesemiconductor component; and e) a control electrode; at least onecooling segment peripherally and laterally adjacent to the at least oneGTO thyristor structure, which shares the metal anode with the at leastone GTO thyristor structure, the cooling segment having a coolingsegment metallization on the cathode side; and an electrical insulationlayer provided between the cooling segment metallization and thedisk-like semiconductor body.
 2. The gate-turn-off semiconductorcomponent as recited in claim 1, wherein the electrical insulation layeris disposed between the cooling segment metallization and a controlelectrode metallization of the control electrode.
 3. The gate-turn-offsemiconductor component as recited in claim 2, wherein the coolingsegment metallization is electrically connected to the metal cathode ofthe at least one GTO thyristor structure.
 4. The gate-turn-offsemiconductor component as recited in claim 3, wherein:the controlelectrode is operatively connected to the metal cathode via at least onetrigger stabilization diode, a conducting-state direction of the triggerstabilization diode being from the control electrode to the metalcathode.
 5. The gate-turn-off semiconductor component as recited inclaim 4, wherein:the trigger stabilization diode has an n⁺ diode-emitterlayer on the cathode side, this n⁺ diode-emitter layer being connectedto the control electrode via at least one resistance path in the p-typebase layer.
 6. The gate-turn-off semiconductor component as recited inclaim 1, wherein the cooling segment metallization is electricallyconnected to the metal cathode of the at least one GTO thyristorstructure.
 7. The gate-turn-off semiconductor component as recited inclaim 1, wherein:the control electrode is operatively connected to themetal cathode via at least one trigger stabilization diode, aconducting-state direction of the trigger stabilization diode being fromthe control electrode to the metal cathode.
 8. The gate-turn-offsemiconductor component as recited in claim 7, wherein:the triggerstabilization diode has an n⁺ diode-emitter layer on the cathode side,this n⁺ diode-emitter layer being connected to the control electrode viaat least one resistance path in the p-type base layer.
 9. Thegate-turn-off semiconductor component as recited in claim 1,wherein:said at least one GTO thyristor structure is in an outer zone ofthe semiconductor body, said p⁺ anode emitter layer being shortened suchthat in an edge region of the at least one GTO thyristor structure,there is no p⁺ anode emitter layer opposite the n⁺ cathode emitterlayer.
 10. The gate-turn-off semiconductor component as recited in claim9, wherein:in said edge region of said at least one GTO thyristorstructure, a charge carrier life (τ2) is shorter than a charge carrierlife (τ1) in a non-edge region of the at least one GTO thyristorstructure.
 11. The gate-turn-off semiconductor component as recited inclaim 1, wherein:in an edge region of said at least one GTO thyristorstructure, a charge carrier life (τ2) is shorter than a charge carrierlife (τ1) in a non-edge region of the at least one GTO thyristorstructure.
 12. A gate-turn-off semiconductor component with a disk-likesemiconductor body comprising:at least one GTO thyristor structure, saidat least one GTO thyristor structure further including:a) at least onep-conducting p⁺ anode emitter layer adjacent to a metal anode ofelectrical conductivity; b) an n-conducting n⁻ base layer adjoining thep⁺ anode emitter layer; c) a p-conducting p-type base layer adjoiningthe n⁻ base layer; d) an n-conducting n⁺ cathode emitter layer adjoiningthe p-type base layer, and adjoining a metal cathode of electricalconductivity on a cathode side of the semiconductor component; and e) acontrol electrode; said at least one GTO thyristor structure being in anouter zone of the semiconductor body, said p⁺ anode emitter layer beingshortened such that in an edge region of the at least one GTO thyristorstructure, there is no p⁺ anode emitter layer opposite the n⁺ cathodeemitter layer.
 13. The gate-turn-off semiconductor component as recitedin claim 12, wherein:the control electrode is operatively connected tothe metal cathode via at least one trigger stabilization diode, aconducting-state direction of the trigger stabilization diode being fromthe control electrode to the metal cathode.
 14. The gate-turn-offsemiconductor component as recited in claim 13, wherein:the triggerstabilization diode has an n⁺ diode-emitter layer on the cathode side,this n⁺ diode-emitter layer being connected to the control electrode viaat least one resistance path in the p-type base layer.
 15. Thegate-turn-off semiconductor component as recited in claim 12, wherein:insaid edge region of said at least one GTO thyristor structure, a chargecarrier life (τ2) is shorter than a charge carrier life (τ1) in anon-edge region of the at least one GTO thyristor structure.
 16. Agate-turn-off semiconductor component with a disk-like semiconductorbody comprising:at least one GTO thyristor structure, said at least oneGTO thyristor structure further including:a) at least one p-conductingp⁺ anode emitter layer adjacent to a metal anode of electricalconductivity; b) an n-conducting n⁻ base layer adjoining the p⁺ anodeemitter layer; c) a p-conducting p-type base layer adjoining the n⁻ baselayer; d) an n-conducting n⁺ cathode emitter layer adjoining the p-typebase layer, and adjoining a metal cathode of electrical conductivity ona cathode side of the semiconductor component; and e) a controlelectrode; and at least one cooling segment peripherally and laterallyadjacent to the at least one GTO thyristor structure, which shares themetal anode with the at least one GTO thyristor structure, wherein in anedge region of said at least one GTO thyristor structure, a chargecarrier life (τ2) is shorter than a charge carrier life (τ1) in anon-edge region of the at least one GTO thyristor structure.
 17. Thegate-turn-off semiconductor component according to claim 16, whereinsaid shorter charge carrier life (τ2) is generated by irradiating thesemiconductor substrate with electrons in an energy range of 1 MeV to2.5 MeV.
 18. The gate-turn-off semiconductor component according toclaim 16, wherein said shorter charge carrier life (τ2) is generated byirradiating the semiconductor substrate with protons.
 19. Thegate-turn-off semiconductor component according to claim 16, whereinsaid shorter charge carrier life (τ2) is generated by irradiating thesemiconductor substrate with α-particles.
 20. The gate-turn-offsemiconductor component as recited in claim 16, wherein:the controlelectrode is operatively connected to the metal cathode via at least onetrigger stabilization diode, a conducting-state direction of the triggerstabilization diode being from the control electrode to the metalcathode.
 21. The gate-turn-off semiconductor component as recited inclaim 20, wherein:the trigger stabilization diode has an n⁺diode-emitter layer on the cathode side, this n⁺ diode-emitter layerbeing connected to the control electrode via at least one resistancepath in the p-type base layer.
 22. The gate-turn-off semiconductorcomponent according to claim 21, wherein the resistance path isgenerated by trench etching in the p-type base layer.